Forms knight ride formation making use of the ammonia which you preheat the manner

摘要

PURPOSE: To form an improved nitride layer which remarkably reduces the size of spiking and is suitable for being used in a semiconductor device. ;CONSTITUTION: A process in which a titanium nitride barrier layer is formed in the semiconductor device by using preheated gaseous ammonia reduces influence by a jointing spike. A substrate having an upper part layer of titanium is heated at a prescribed temp. in a reaction furnace. The gaseous ammonia is preheated at ≥600°C and is introduced in the reaction furnace. The preheated gaseous ammonia reacts with the preheated titanium layer to form an excellent titanium nitride(TiN) layer confronting a joining spike phenomenon. By using this method, other nitride layers of group IVB elements and group VB elements of the periodic table can be formed.;COPYRIGHT: (C)1993,JPO