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Production manner null of cooling wheel for semiconductor equipment

机译:半导体设备冷却轮的生产方式无效

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a heat sink for a semiconductor device by which a heat sink for a semiconductor deice coated with a blackened coating layer can be manufactured efficiently. ;SOLUTION: This method includes a forming process, in which intermediate process materials 25 formed separately by arranging a plurality of heat sinks 12 are formed on a bar 11, composed of copper material by press working or etching, a resist film forming process in which a region, where the heat sink of the intermediate process material is formed, is coated with stripe plating resist film 26, a partial plating process in which a nickel plating layer 27 is formed on exposed portions of the intermediate process material 25 coated with a stripe plating resist film 26, a resist film removal process, in which the stripe plating resist film 26 is removed from the intermediate process material 25 on which the nickel plating layer 27 is partially formed and a blackening process, in which a blacked coating layer 28 is formed on a surface of the intermediate process material 25 from which the stripe plating resist film 26 is removed.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种制造用于半导体器件的散热器的方法,通过该方法可以有效地制造涂覆有涂黑涂层的半导体器件的散热器。 ;解决方案:该方法包括形成工艺,在该工艺中,通过压制或蚀刻在由铜材料构成的棒11上形成通过布置多个散热器12而分别形成的中间工艺材料25,在形成有中间处理材料的散热片的区域上涂布条纹状的抗蚀剂膜26,在部分处理中,在形成有条纹的中间处理材料25的露出部分上形成镍镀层27。电镀抗蚀剂膜26,抗蚀剂膜去除工艺和黑化工艺,在该工艺中,从部分形成镍镀层27的中间工艺材料25去除条纹状电镀抗蚀剂膜26,在黑化工艺中,形成黑色涂层28形成在中间工艺材料25的表面上,该表面上去除了抗镀条条纹膜26。版权所有:(C)2001,JPO

著录项

  • 公开/公告号JP3258298B2

    专利类型

  • 公开/公告日2002-02-18

    原文格式PDF

  • 申请/专利权人 株式会社三井ハイテック;

    申请/专利号JP19990246080

  • 发明设计人 梅田 和彦;

    申请日1999-08-31

  • 分类号H01L23/36;

  • 国家 JP

  • 入库时间 2022-08-22 00:59:49

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