Connection union null with the semiconductor device implemental substrate or cooling wheel and the production manner and the said substrate or cooling wheel and

摘要

PROBLEM TO BE SOLVED: To provide an AlN(aluminium nitride) semiconductor element mounting substrate, which can joint a semiconductor element at high strength and has a metallized layer to satisfactorily dissipate heat, or a heat sink and a jointed body of the substrate or the heat sink with the semiconductor element. ;SOLUTION: A semiconductor element mounting substrate or a heat sink has at least a thin film layer 2 consisting of an active metal layer, a thin film layer 3 consisting of an Ni3Mo layer, a thin film layer 4 consisting of a Cu layer, a thin film layer 5 consisting of an Ni layer and an Au thin film layer 6 on an AlN substrate 1. In a jointed body of the AlN substrate or the heat sink with a semiconductor element, the semiconductor element 9 is bonded to one part of the metallized topmost Au thin film 6 with a solder or a brazing metal. Moreover, the manufacturing method of this AlN semiconductor element mounting substrate or the heat sink comprises a process for forming the layer 2, consisting of an active metal layer on the aluminium nitride substrate through sputtering, a process for forming an Ni3Mo thin film layer, a process for forming a Cu-plated layer, a process for polishing the Cu-plated layer, a process for forming an Ni-plated layer and a process for forming an Au-plated layer.;COPYRIGHT: (C)2000,JPO