SILICIDE STATIC DISCHARGE PROTECTIVE CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT AND SILICIDE STATIC DISCHARGE PROTECTIVE CIRCUIT THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide an ESD protective circuit simplifying steps and having good ESD characteristics and an integrated circuit.;SOLUTION: The silicide static discharge protective circuit comprises an NMOS transistor 231 having a silicide layer 308 on a gate electrode 30 and source/drain regions 304A, in such a manner that one of the self-source/drain regions is connected to a ground voltage terminal; and a PMOS transistor 232 having a silicide layer 308 on a gate electrode 305 and source/drain regions 306, in such a manner that a self-gate electrode is connected to a ground voltage terminal 309, one of the self-source/drain junction is connected to the other of the source/drain regions of the NMOS transistor, and the other of the self- source/drain regions is connected to a pad 310.;COPYRIGHT: (C)2002,JPO