首页> 外国专利> STATIC DISCHARGE PROTECTIVE CIRCUIT FOR INTEGRATED CIRCUIT

STATIC DISCHARGE PROTECTIVE CIRCUIT FOR INTEGRATED CIRCUIT

机译:集成电路的静电放电保护电路

摘要

PURPOSE: To provide a static discharge protective circuit used for a field effect transistor circuit having a feature section of 1 μm. ;CONSTITUTION: A protective circuit 30 is provided with a trigger circuit 24 and a clamp circuit 26. The circuit 24 clamps the node of a protected integrated circuit 10 to both upper and lower potentials in response to static discharge by turning on the clamp circuit 26. When the node is clamped, the static discharge can be dispersed to one potential source depending upon the polarity of the discharge. It is preferable to constitute the trigger circuit 24 of a resistance-capacitor network which generates a required control signal whenever electric power is supplied to the protected circuit 10 and the clamp circuit 26 of a pair of transistors which connect input pins to both high and low potential sources. Typically, one protective circuit is coupled to each input-output pin of the protected integrated circuit 10.;COPYRIGHT: (C)1995,JPO
机译:用途:提供一种静电放电保护电路,用于特征截面为1μm的场效应晶体管电路。组成:保护电路30设有触发电路24和钳位电路26。电路24通过打开钳位电路26来响应静电放电,将受保护集成电路10的节点钳位到高电位和低电位。当节点被钳位时,静电放电可以根据放电的极性分散到一个电位源。优选地,构成电阻-电容器网络的触发电路24,该电阻-电容器网络的触发电路24每当将电力输入到将输入引脚连接到高和低端的一对晶体管的受保护电路10和钳位电路26时就生成所需的控制信号。潜在来源。通常,一个保护电路耦合到被保护集成电路10的每个输入-输出引脚。;版权所有:(C)1995,JPO

著录项

  • 公开/公告号JPH077406A

    专利类型

  • 公开/公告日1995-01-10

    原文格式PDF

  • 申请/专利权人 NATL SEMICONDUCTOR CORP NS;

    申请/专利号JP19900417893

  • 发明设计人 MERRILL RICHARD B;

    申请日1990-12-19

  • 分类号H03K19/003;H01L23/60;H03K17/08;

  • 国家 JP

  • 入库时间 2022-08-22 04:20:33

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