CHEMICAL MECHANICAL POLISHING TREATMENT SYSTEM AND CHEMICAL MECHANICAL POLISHING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a CMP treatment system that can reduce the influence of scattering of light due to a slurry which is an obstacle for an optical measurement under polishing and can mitigate the influence that the purified water used for an optical measurement gets into a polishing cloth and reduces the density of the slurry, and to provide a CMP method.;SOLUTION: Cleaning a predetermined region under CMP on the surface of a treated substrate (wafer) 206 by using a cleaning liquid, the predetermined region is monitored by using an optical head 204 with a cleaning nozzle. This CMP treatment system can reduce the influence of scattering of light due to the slurry that is the obstacle for the optical measurement under polishing and can reduce a consuming volume of the purified water used for the optical measurement by removing the slurry. Also this CMP treatment system can mitigate the influence that the purified water used for the optical measurement gets into the polishing cloth and reduces the density of the slurry, and can reduce changes of polishing characteristics such as degradation of polishing speed. In order to reduce the influence of scattering of light due to the slurry that is an obstacle for an optical measurement, the purified water is used.;COPYRIGHT: (C)2002,JPO