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STRESS ADJUSTMENT METHOD AND DEVICE OF MASK FOR EXPOSURE, MANUFACTURING METHOD OF THE MASK FOR EXPOSURE INCLUDING THE STRESS ADJUSTMENT METHOD IN PROCESS, AND PATTERN-TRANSFERRED SEMICONDUCTOR DEVICE USING THE MASK FOR EXPOSURE
STRESS ADJUSTMENT METHOD AND DEVICE OF MASK FOR EXPOSURE, MANUFACTURING METHOD OF THE MASK FOR EXPOSURE INCLUDING THE STRESS ADJUSTMENT METHOD IN PROCESS, AND PATTERN-TRANSFERRED SEMICONDUCTOR DEVICE USING THE MASK FOR EXPOSURE
PROBLEM TO BE SOLVED: To provide a mask for exposure that adjusts the pattern-film stress of a mask for fine pattern exposure and prevents pattern misalignment, and a semiconductor device where accurate pattern transfer is made.;SOLUTION: The mask 18 for exposure is dipped into a solution tank 1 filled with a solution 2, reference and counter electrodes 7 and 8 are additionally provided, and the mask for exposure is connected to the counter electrode via a power supply 9. The state of the component material of a pattern film on the mask for exposure in an aqueous solution is obtained according to the relationship between potential and pH, the potential of the pattern film of the mask for exposure to the reference electrode is controlled to the desired potential, and reduction or oxidation reaction is generated for adjusting the pattern film stress. The adjustment of pH may be made.;COPYRIGHT: (C)2002,JPO
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