首页> 外国专利> STRESS ADJUSTMENT METHOD AND DEVICE OF MASK FOR EXPOSURE, MANUFACTURING METHOD OF THE MASK FOR EXPOSURE INCLUDING THE STRESS ADJUSTMENT METHOD IN PROCESS, AND PATTERN-TRANSFERRED SEMICONDUCTOR DEVICE USING THE MASK FOR EXPOSURE

STRESS ADJUSTMENT METHOD AND DEVICE OF MASK FOR EXPOSURE, MANUFACTURING METHOD OF THE MASK FOR EXPOSURE INCLUDING THE STRESS ADJUSTMENT METHOD IN PROCESS, AND PATTERN-TRANSFERRED SEMICONDUCTOR DEVICE USING THE MASK FOR EXPOSURE

机译:曝光掩模的应力调整方法和装置,包括工序中的应力调整方法的曝光掩模的制造方法,以及使用曝光掩模的图案转印半导体装置

摘要

PROBLEM TO BE SOLVED: To provide a mask for exposure that adjusts the pattern-film stress of a mask for fine pattern exposure and prevents pattern misalignment, and a semiconductor device where accurate pattern transfer is made.;SOLUTION: The mask 18 for exposure is dipped into a solution tank 1 filled with a solution 2, reference and counter electrodes 7 and 8 are additionally provided, and the mask for exposure is connected to the counter electrode via a power supply 9. The state of the component material of a pattern film on the mask for exposure in an aqueous solution is obtained according to the relationship between potential and pH, the potential of the pattern film of the mask for exposure to the reference electrode is controlled to the desired potential, and reduction or oxidation reaction is generated for adjusting the pattern film stress. The adjustment of pH may be made.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:提供一种曝光用掩模,该掩模可调节掩模的图案膜应力以实现精细图案曝光并防止图案未对准;以及一种可进行精确图案转印的半导体器件;解决方案:用于曝光的掩模18将其浸入盛有溶液2的溶液罐1中,并另外设置参考电极和对电极7和8,用于曝光的掩模通过电源9与对电极连接。图案膜的构成材料的状态根据电位与pH的关系,获得用于水溶液的曝光用掩模上的膜厚,将用于曝光于参考电极的掩模的图案膜的电位控制为期望的电位,并进行还原或氧化反应。调整图案膜的应力。可以调节pH值。版权所有:(C)2002,日本特许厅

著录项

  • 公开/公告号JP2002110519A

    专利类型

  • 公开/公告日2002-04-12

    原文格式PDF

  • 申请/专利权人 MITSUBISHI ELECTRIC CORP;

    申请/专利号JP20000298350

  • 发明设计人 KICHISE KOJI;YABE HIDETAKA;

    申请日2000-09-29

  • 分类号H01L21/027;G03F1/08;G03F1/16;

  • 国家 JP

  • 入库时间 2022-08-22 00:58:51

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