CSP SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD AND SEMICONDUCTOR MODULE

摘要

PROBLEM TO BE SOLVED: To provide a CSP semiconductor device that can prevent Si-chip cracks and warpage from being easily generated by change in temperature in the case that the semiconductor device is mounted on a substrate.;SOLUTION: Several processes are provided, and a bump 180 is formed at a second via section at a side opposite to the terminal side of a wafer substrate. In this case, the processes include a process for forming a hole that does not pass through the substrate in the formation region of a second via section 165 at a terminal side at a wafer level, a process for opening a terminal section as the formation region of a first via section 160 and at the same time for including the surface section of the hole of the formation region of the second via section for forming an insulating layer 120 at the terminal side, a process for forming a feeding layer 130 on the insulating layer, a process for forming a plating-resistant resist layer having an opening corresponding to wiring and the formation regions of the first and second via sections on the feeding layer, a process for performing electrolytic plating onto the feeding layer exposed from the opening of the resist layer, a process for allowing the exposed feeding layer to be subjected to etching elimination after the resist layer is peeled, and a process for polishing the side opposite to the terminal side of the wafer substrate for passing through the hole.;COPYRIGHT: (C)2002,JPO