METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE, METHOD OF DESIGNING PATTERN OF PHOTOMASK, PHOTOMASK AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To form a fine pattern without using an auxiliary pattern method and a phase shift mask or the like, and to easily inspect the fault of the mask.;SOLUTION: A light-shielding film 2 is formed on the surface of a substrate 1, and opening patterns 2a for light transmission each of the pattern consisting of two openings running in parallel with mutually fixed interval and substantially the same line width, are formed in the film 2, so as to be isolated with each other. The quantity of exposure (exposure energy to a sufficiently large opening pattern) at exposure of a photoresist by the use of the photomask 5 is more than four times and less than twenty times of the exposure quantity at the boundary, in which the photoresist reaches insolubility from solubility to a developing solution by exposure, or the exposure quantity at the boundary in which the photoresist reaches solubility from insolubility.;COPYRIGHT: (C)2002,JPO