首页> 外国专利> SPIN VALVE TYPE HUGE MAGNETORESISTANCE EFFECT ELEMENT, MAGNETORESISTANCE EFFECT TYPE MAGNETIC HEAD AND THEIR MANUFACTURING METHODS

SPIN VALVE TYPE HUGE MAGNETORESISTANCE EFFECT ELEMENT, MAGNETORESISTANCE EFFECT TYPE MAGNETIC HEAD AND THEIR MANUFACTURING METHODS

机译:旋转阀式巨型磁阻效应元件,磁阻效应式磁头及其制造方法

摘要

PROBLEM TO BE SOLVED: To improve a sensitivity, to avoid an output loss, to improve output characteristics and to improve reliability by an improvement in a radiating effect by reducing a dead region due to the presence of a hard magnetic layer for applying a bias magnetic field to be imparted to a free magnetic layer, and enabling a magnetic field to be rotated with good sensitivity by a signal magnetic field from an exterior in a spin valve type huge magnetoresistance effect element and a magnetic head.;SOLUTION: The spin valve type huge magnetoresistance effect element comprises a first antiferromagnetic layer 1, a fixed magnetic layer 2 connected to the first antiferromagnetic layer 1, a nonmagnetic conductive layer 3, a free magnetic layer 4 changing in the magnetizing direction by the signal magnetic field, and a second antiferromagnetic spacer layer 22 to be long distance exchange connected to the magnetic layer 4 via the spacer layer 21. A direction of an easy axis of magnetization due to the exchange connection of the first antiferromagnetic layer 21 to the fixed magnetic layer connected thereto is set to perpendicularly cross with an easy direction of magnetization of the long distance exchange connecting magnetic field of the second layer 22 to the magnetic layer 4 to impart a predetermined bias magnetic field to the layer 4, and an influence of the application of the bias magnetic field to the high magnetic layer is reduced.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:通过减少由于施加偏磁而形成的硬磁性层引起的死区,通过改善辐射效果来提高灵敏度,避免输出损失,改善输出特性并提高可靠性。磁场施加到自由磁性层上,并通过旋转阀型巨大磁阻效应元件和磁头中来自外部的信号磁场使磁场以良好的灵敏度旋转;解决方案:旋转阀型巨大的磁阻效应元件包括:第一反铁磁性层1,与第一反铁磁性层1,连接的固定磁性层2,非磁性导电层3,通过信号磁场沿磁化方向变化的自由磁性层4和第二反铁磁性长距离交换的隔离层22通过隔离层21与磁性层4连接。易磁化轴的方向由于第一反铁磁层21与连接到其上的固定磁性层的交换连接而引起的磁化强度被设置为与第二层22的长距离交换连接磁场与磁性层4的易交换方向的磁化方向垂直相交。预定的偏置磁场施加到层4上,减小了偏置磁场施加到高磁性层上的影响。;版权所有:(C)2002,JPO

著录项

  • 公开/公告号JP2002232039A

    专利类型

  • 公开/公告日2002-08-16

    原文格式PDF

  • 申请/专利权人 SONY CORP;

    申请/专利号JP20010026366

  • 发明设计人 MAKINO EIJI;

    申请日2001-02-02

  • 分类号H01L43/08;G01B7/00;G01R33/09;G11B5/39;H01F10/32;H01L43/12;

  • 国家 JP

  • 入库时间 2022-08-22 00:58:27

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