首页> 外国专利> MAGNETORESISTANCE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF, MAGNETORESISTANCE EFFECT TYPE MAGNETIC HEAD AND MANUFACTURING METHOD THEREOF, AND MAGNETIC RECORDING/REPRODUCING EQUIPMENT

MAGNETORESISTANCE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF, MAGNETORESISTANCE EFFECT TYPE MAGNETIC HEAD AND MANUFACTURING METHOD THEREOF, AND MAGNETIC RECORDING/REPRODUCING EQUIPMENT

机译:磁阻效应元件及其制造方法,磁阻效应类型磁头及其制造方法以及磁记录/再现设备

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element together with its manu facturing method having a good magnetoresistance ratio dR/R which is excellent in corrosion-resistance, thermal stability, and ESD-resistance characteristics, a magnetoresistance effect type magnetic head together with its manufacturing method, and a magnetic recording/reproducing equipment.;SOLUTION: On a board 2, there are provided an anti-ferromagnetic layer 9 of anti-ferromagnetic material having a crystal structure of face-centered tetragonal system, a pin layer 11, a spacer layer 5, and a free layer 4. The pin layer 11 has a first ferromagnetic layer 8 hitting the anti-ferromagnetic layer 9, a non-magnetic layer 7, and a second ferromagnetic layer 6 laminated. Among the layers, the crystal particle sizes of only the anti-ferromagnetic layer 9, the first ferromagnetic layer 8, and the non-magnetic layer 7 are 50 nm or less.;COPYRIGHT: (C)2001,JPO
机译:要解决的问题:为了提供一种磁阻效应元件及其制造方法,该磁阻效应元件具有良好的磁阻比dR / R,并且具有优异的耐蚀性,热稳定性和ESD电阻特性,磁阻效应型磁头与解决方案:在板2上,提供由具有表面中心四方晶系的晶体结构的反铁磁材料制成的反铁磁层9,pin层11。针脚层11具有层叠在反铁磁层9上的第一铁磁层8,非磁性层7和第二铁磁层6。在各层中,仅反铁磁性层9,第一铁磁性层8和非磁性层7的晶体粒径为50nm或更小。版权所有:(C)2001,JPO

著录项

  • 公开/公告号JP2001345494A

    专利类型

  • 公开/公告日2001-12-14

    原文格式PDF

  • 申请/专利权人 SONY CORP;

    申请/专利号JP20000160978

  • 发明设计人 MAESAKA AKIHIRO;

    申请日2000-05-30

  • 分类号H01L43/08;G01R33/09;G11B5/39;H01F10/14;H01F41/18;H01L43/12;

  • 国家 JP

  • 入库时间 2022-08-22 00:56:17

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