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Giant magnetoresistance and tunnel magnetoresistance effects in FeCoGd-based spin valves and magnetic tunnel Junctions

机译:基于Fecogd的旋转阀和磁隧道连接的巨型磁阻和隧道磁阻效应

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Giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) were studied in spin valves of FeCo/Cu/(FeCo)_(1-x)-Gd_x and magnetic tunnel junctions of FeCo/AlO/(FeCo)_(1-x)Gd_x, respectively. When the FeCoGd layer is thick enough, both GMR and TMR ratios change their signs from positive to negative at the compensation composition with 0.293< =x_0<=0.337 as the Gd content is increased. This scenario is originated from a competition of rare-earth and transition-metal spins in FeCoGd layers with antiferromagnetic coupling. Accordingly, it is deduced that in the FeCoGd layer the spin polarizations P_N of electrons at the Fermi level and tunneling spin polarization P_(TSP) are negative and positive for x x_0.
机译:在FECO / Cu /(FECO)_(1-X)-GD_X和FECO / ALO /(FECO)_(1-X)的磁隧道连接的旋转阀门中研究了巨磁磁阻(TMR)和隧道磁阻(TMR) gd_x分别。当FECOGD层足够厚时,GMR和TMR比率均在补偿组合物中改变它们的迹象,以0.293 <= 0 <= 0.337增加,因为GD含量增加。这种情况起源于具有反铁磁耦合的Fecogd层中稀土和过渡金属旋转的竞争。因此,推导出在FECOGD层中,在FERMI水平和隧道旋转偏振P_(TSP)处的电子的自旋偏振P_N分别为x

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