MAGNETORESISTANCE EFFECT ELEMENT AND ITS MANUFACTURING METHOD, MAGNETORESISTANCE EFFECT TYPE HEAD, MAGNETIC RECORDING DEVICE, AND MAGNETORESISTANCE EFFECT MEMORY ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element having thermal stability and high MR ratio.;SOLUTION: The magnetoresistance effect element contains a free layer that is easily magnetized and rotated by an external magnetic field, a first nonmagnetic layer, a first fixed layer that is provided at the opposite side of the free layer for the first nonmagnetic layer and will not easily undergo magnetization rotation due to the external magnetic field. At least one of the first fixed layer or the free layer contains a first metal magnetic film that comes into contact with the first nonmagnetic layer and a first oxide magnetic film.;COPYRIGHT: (C)2001,JPO