MAGNETORESISTANCE EFFECT ELEMENT, MAGNETORESISTANCE EFFECT TYPE MAGNETIC HEAD USING THE SAME, MAGNETIC RECORDING DEVICE, AND MAGNETORESISTANCE EFFECT TYPE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element (MR) that is superior in MR ratio and heat resistance.;SOLUTION: At least one of magnetic layers includes a ferromagnetic material M-X indicated by an expression M_100-aX_a. In this case, M is at least one type selected from Fe, Co, and Ni, and X is shown by an expression X¹_bX²_cX³_d. In this case, X¹ is at least one type selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au, and X² is at least one type selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn, and lanthanoid, and X³ is at least one type selected from Si, B, C, N, O, P, and S. a, b, c, and D are numeric values that meet 0.05a60, 0b60, 0c30, 0d20, and a=b+c+d.;COPYRIGHT: (C)2005,JPO&NCIPI