Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element

摘要

A magnetoresistance effect element (100) includes a free layer (5), in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer (4), and a first pinned layer (3) provided on a side opposite to the free layer of the first non-magnetic layer (4), in which a magnetization direction of the first pinned layer (3) is not easily rotated in response to the external magnetic field. At least one of the first pinned layer (3) and the free layer (5) includes a first metal magnetic film (32) contacting the first non-magnetic layer (4), and a first oxide magnetic film (31). IMAGE