METHOD FOR EVALUATING RELIABILITY CHARACTERISTICS OF OXIDE FILM OF MOS SEMICONDUCTOR DEVICE ON SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for evaluating reliability characteristics of an oxide film of a MOS semiconductor device on a semiconductor wafer, by which quick accurate evaluation can be performed by utilizing a conventional oxide film reliability evaluation equipment for a small diameter wafer even if a semiconductor wafer diameter becomes larger than 300 mm.;SOLUTION: The method is provided for evaluating the reliability characteristics of the oxide film of the MOS semiconductor device wherein an oxide film and a conductive film are formed on one another on the semiconductor wafer. The method comprises the evaluation after the process for reducing at least the diameter of the wafer in measuring the reliability characteristics of the oxide film by applying an electrical stress to the oxide film between the wafer of the MOS semiconductor device and the conductive film.;COPYRIGHT: (C)2002,JPO