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Schottky barrier diode and Schottky barrier diode clamp die transistor
Schottky barrier diode and Schottky barrier diode clamp die transistor
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机译:肖特基势垒二极管和肖特基势垒二极管钳位晶体管
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摘要
PURPOSE: To form a Schottky barrier diode clamp type transistor while, across a collector/base junction of a bipolar transistor, positioned in parallel, to form a Schottky diode as a part of an overall process for manufacturing an integrated circuit. CONSTITUTION: A schottky diode 4 comprising a true polysilicon layer 30 for separating a metal solicide layer 48 from an N conduction type active region 16a, is formed. The configuration, avoiding necessity for a process step where a window is opened on a true polysilicon layer, requires less surface area part, compared to a conventional device, required for forming a Schottky diode.
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