DLTS SAMPLE STRUCTURE, DLTS MEASURING METHOD, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a DLTS sample structure, a DLTS measuring method, and a semiconductor device for detecting an impurity coming into a semiconductor layer during a process.;SOLUTION: In this sample structure, a Schottky electrode 23 is formed on the surface of a semiconductor substrate 22 where a field pattern 21 is formed. The Schottky electrode 23 is formed on the surface of the substrate 22 so as to cover a plurality of field patterns 21. The DLTS measurement is performed, by grounding the rear surface side of the substrate 22 and applying a reverse bias voltage which changes in pulse to the Schottky electrode 23, to detect a signal based on a transit phenomenon occurring in a depletion layer 24 within the substrate 22.;COPYRIGHT: (C)2002,JPO