首页> 外国专利> AUTOMATIC COMPENSATING METHOD FOR TEMPERATURE DEPENDENCY OF JUNCTION CAPACITANCE OF SAMPLE IN DLTS MEASUREMENT AND BIAS CIRCUIT

AUTOMATIC COMPENSATING METHOD FOR TEMPERATURE DEPENDENCY OF JUNCTION CAPACITANCE OF SAMPLE IN DLTS MEASUREMENT AND BIAS CIRCUIT

机译:DLTS测量和偏置电路中样品结电容温度依赖性的自动补偿方法

摘要

PURPOSE:To compensate the temperature dependency of deep level-transient spectroscopy (DLTS) easily and automatically by using an arbitrary diode in a Schottky diode array of one wafer prepared as the sample to be measured as an element for compensation connected to the differential terminal of a capacitance bridge with the differential terminal and connecting the diode to the differential terminal through the bias circuit. CONSTITUTION:One diode in the Schottky diode array of one wafer prepared as the sample to be measured is used as the element D2 for compensation. Accordingly, since the temperature dependency of the junction capacitance C0' of the element D2 for compensation approximates to that of the junction capacitance C0 of the sample to be measured D1, the capacitance C0 of the sample D1 can be cancelled easily only by applying the same reverse bias as the sample D1 to the element D2, and automatic measurement by a computer is enabled.
机译:目的:通过在准备作为待测样品的一个晶片的肖特基二极管阵列中使用任意二极管作为补偿元件,轻松而自动地补偿深电平瞬态光谱法(DLTS)的温度依赖性,作为补偿元件连接到DTS的差分端子。电容桥具有差分端子,并且通过偏置电路将二极管连接到差分端子。组成:一个晶片的肖特基二极管阵列中的一个二极管作为待测样品,被用作补偿元件D2。因此,由于补偿用元件D2的结电容C0'的温度依存性接近被测定样品D1的结电容C0的温度依存性,因此,仅通过施加相同的值就可以容易地消除样品D1的电容C0。将样品D1反向偏置到元素D2,并启用计算机自动测量。

著录项

  • 公开/公告号JPS5946040A

    专利类型

  • 公开/公告日1984-03-15

    原文格式PDF

  • 申请/专利权人 FURUKAWA DENKI KOGYO KK;

    申请/专利号JP19820157088

  • 发明设计人 ITOU YOSHITERU;KASHIYANAGI YUUZOU;

    申请日1982-09-09

  • 分类号G01N27/22;H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-22 09:39:28

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