首页>
外国专利>
HIGH DENSITY PLASMA SOURCE FOR IONIZED METAL DEPOSITION CAPABLE OF EXCITING PLASMA WAVE
HIGH DENSITY PLASMA SOURCE FOR IONIZED METAL DEPOSITION CAPABLE OF EXCITING PLASMA WAVE
展开▼
机译:能够激发等离子体波的高密度等离子体源,用于电离金属沉积
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To develop a compact high magnetic field magnetron for causing the perfect coverage of a deep hole and performing persistent self-sputtering of copper. SOLUTION: This magnetron 32 perfectly covers a target 14 though its area is made small but particularly advantageous for low pressure plasma sputtering or persistent self-sputtering. The magnetron includes outside pole surfaces surrounding inside pole surfaces with a gap therebetween. The outside poles of the magnetron are smaller than the outside poles of a circular magnetron simultaneously elongating from the center of the target to the circumference. A preferable triangular shape having a small apex angle of 20 to 30 deg. can be formed from an outside bar magnet of one magnetic pole and surrounds an inside magnet of the other magnetic pole. The magnetron 32 generates plasma waves in the vicinity of 22 MHz, and the plasma waves interact with the electrons of plasma of 1 to 20 eV to improve plasma density.
展开▼