METHOD FOR FORMING RESIST PATTERN, METHOD FOR FORMING DOPED AREA, AND METHOD FOR FORMING FINE PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern by which a regular pattern distributed in a two-dimensional plane can be formed relatively easily.;SOLUTION: A mask in which a plurality of transmitting areas are distributed in first pitch in a first direction and, in addition, regularly in a second direction is prepared. The mask is disposed oppositely to the surface of a substrate on which a photosensitive resist film is formed with a very narrow gap in between and the photosensitive resist film formed on the substrate is partially exposed through the mask. Then either the mask or substrate is moved relatively to the other by a distance shorter than the first pitch in the first direction and the resist film is partially exposed through the mask. After exposure, the exposed resist film is developed. The adsorbed dose distribution and development sensitivity of the photosensitive resist film in the first and second exposing steps are set so that the first and second patterns respectively formed in the first and second steps may become continuous in the first direction.;COPYRIGHT: (C)2002,JPO