Semiconductor device having gate-gate, drain-drain, and drain-gate connecting layers and method of fabricating the same

摘要

A semiconductor memory device comprising first and second gate-gate connecting layers, first and second drain-drain connecting layers, and first and second drain-gate connecting layers. The first and second gate-gate connecting layers respectively connect a gate of a driver transistor to a gate of a load transistor. The first and second drain-drain connecting layers are formed over a first interlayer dielectric and have a refractory metal nitride layer. The first and second drain-drain connecting layers respectively connect a drain of the driver transistor to a drain of the load transistor. The first and second drain-gate connecting layers are formed over a second interlayer dielectric, and respectively connect the first drain-drain connecting layer to the second gate-gate connecting layer, and the second drain-drain connecting layer to the first gate-gate connecting layer.