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Semiconductor device having gate-gate, drain-drain, and drain-gate connecting layers and method of fabricating the same
Semiconductor device having gate-gate, drain-drain, and drain-gate connecting layers and method of fabricating the same
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机译:具有栅极-栅极,漏极-漏极和漏极-栅极连接层的半导体器件及其制造方法
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摘要
A semiconductor device comprising a peripheral circuit portion and a memory cell portion including a plurality of memory cells. Each memory cell has first and second gate-gate connecting layers, first and second drain-drain connecting layers, and first and second drain-gate connecting layers. The first and second gate-gate connecting layers respectively connect the gates of driver transistors to the gates of load transistors. The first and second drain-drain connecting layers are formed over a first interlayer dielectric and respectively connect the drains of driver transistors to the drains of load transistors. The first and second drain-gate connecting layers are formed over a second interlayer dielectric and respectively connect the first drain-drain connecting layer to the second gate-gate connecting layer and the second drain-drain connecting layer to the first gate-gate connecting layer.
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