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High voltage MOS device with no field oxide over the p-top region

机译：高压MOS器件在p顶部区域没有场氧化层

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摘要

A high voltage MOS device (100) is disclosed. The MOS device comprises an n-well region (113) with a top layer (108) of opposite conductivity. A thin layer of oxide (124) is formed over the top layer (108).

机译：公开了一种高压MOS器件（ 100 ）。 MOS器件包括一个n阱区（ 113 ），其顶层具有相反的导电性（ 108 ）。在顶层（ 108 ）上形成一层氧化物薄层（ 124 ）。 展开▼

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公开/公告号US2002130360A1

专利类型

公开/公告日2002-09-19

原文格式PDF

申请/专利权人 SEMICONDUCTOR COMPONENTS INDUSTRIES LLC.;
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申请/专利号US20010808965

发明设计人 JOE FULTON;ZIA HOSSAIN;EVGUENIY N. STEFANOV;MOHAMMED TANVIR QUDDUS;MOHAMED IMAM;
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申请日2001-03-16

分类号H01L21/336;H01L29/76;H01L29/94;H01L29/94;H01L31/113;H01L31/119;

国家 US

入库时间 2022-08-22 00:53:08

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