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Integrated circuit ferroelectric memory devices including plate lines directly on ferroelectric capacitors and methods of fabricating the same
Integrated circuit ferroelectric memory devices including plate lines directly on ferroelectric capacitors and methods of fabricating the same
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机译:包括直接在铁电电容器上的极板线的集成电路铁电存储器件及其制造方法
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摘要
Integrated circuit ferroelectric memory devices are provided that include an integrated circuit transistor. The memory device further includes a ferroelectric capacitor on the integrated circuit transistor. The ferroelectric capacitor includes a first electrode adjacent the transistor, a second electrode remote from the transistor and a ferroelectric film therebetween. The memory device further includes a plate line directly on the ferroelectric capacitor. Methods are also provided that include forming a ferroelectric capacitor on the integrated circuit transistor and forming a plate line directly on the ferroelectric capacitor.
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