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Methods of fabricating integrated circuit ferroelectric memory devices including plate lines directly on ferroelectric capacitors
Methods of fabricating integrated circuit ferroelectric memory devices including plate lines directly on ferroelectric capacitors
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机译:直接在铁电电容器上制造包括板线的集成电路铁电存储器件的方法
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摘要
Integrated circuit ferroelectric memory devices are provided that include an integrated circuit transistor. The memory device further includes a ferroelectric capacitor on the integrated circuit transistor. The ferroelectric capacitor includes a first electrode adjacent the transistor, a second electrode remote from the transistor and a ferroelectric film therebetween. The memory device further includes a plate line directly on the ferroelectric capacitor. Methods are also provided that include forming a ferroelectric capacitor on the integrated circuit transistor and forming a plate line directly on the ferroelectric capacitor.
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