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Shallow trench isolation on a silicon substrate using nitrogen implant into the side wall
Shallow trench isolation on a silicon substrate using nitrogen implant into the side wall
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机译:使用氮注入侧壁在硅衬底上进行浅沟槽隔离
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摘要
A process for fabricating a tapered trench on a silicon substrate. The process comprises the steps of forming an initial trench in the substrate and implanting nitrogen ions on the initial trench side walls. More nitrogen ions are implanted adjacent the exposed surface of the substrate than adjacent the trench bottom. Finally, the initial trench side walls are oxidized to create the tapered shape.
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