SHALLOW TRENCH ISOLATION ON A SILICON SUBSTRATE USING NITROGEN IMPLANT INTO THE SIDE WALL

摘要

A method for manufacturing a tapered trench (tapered trench) on a silicon substrate, and forming the initial trench in the substrate, but injecting the nitrogen ions in the side walls of the initial trenches adjacent to the exposed surface of the substrate than the portion adjacent to the trench bottom comprising the steps of: more implanting nitrogen ions into a part, by oxidizing the side walls of the initial trenches comprises the steps of creating a tapered shape.