Use of source/drain asymmetry MOSFET devices in dynamic and analog circuits

摘要

A CMOS charge pump circuit with diode connected MOSFET transistors is formed with asymmetric transistors which preferably have halo source region implants with a forward threshold voltage (V_thF) and with a reverse threshold voltage (V_thR), with the forward threshold voltage V_thF being substantially larger than the reverse threshold voltage V_thR. Preferably, the halo source regions are super halos. An SRAM circuit with pass transistors and pull down transistors includes pass transistors which comprise super halo asymmetric devices.