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Method of forming embedded copper interconnections and embedded copper interconnection structure

机译:形成嵌入式铜互连的方法和嵌入式铜互连结构

摘要

Embedded interconnections of copper are formed by forming an insulating layer, forming embedded interconnections of copper in the insulating layer, making an exposed upper surface of the insulating layer and an exposed surface of the embedded interconnections of copper coplanar according to chemical mechanical polishing, and forming a protective silver film on the exposed surface of the embedded interconnections of copper. These steps are repeated on the existing insulating layer thereby to produce multiple layers of embedded interconnections of copper. The exposed surface of the embedded interconnections of copper is plated with silver according to immersion plating.
机译:通过形成绝缘层,在绝缘层中形成铜的嵌入互连线,根据化学机械抛光使绝缘层的暴露的上表面和铜的嵌入互连线的暴露表面共面,来形成铜的嵌入互连线。在嵌入的铜互连的裸露表面上的保护性银膜。在现有绝缘层上重复这些步骤,从而生产出多层嵌入式铜互连。根据浸入电镀法,铜的嵌入互连线的裸露表面镀有银。

著录项

  • 公开/公告号US6391775B1

    专利类型

  • 公开/公告日2002-05-21

    原文格式PDF

  • 申请/专利权人 EBARA CORPORATION;

    申请/专利号US20000660411

  • 发明设计人 NAOAKI OGURE;HIROAKI INOUE;

    申请日2000-09-12

  • 分类号H01L214/40;

  • 国家 US

  • 入库时间 2022-08-22 00:49:10

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