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Tungsten CMP with improved alignment mark integrity, reduced edge residue, and reduced retainer ring notching
Tungsten CMP with improved alignment mark integrity, reduced edge residue, and reduced retainer ring notching
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机译:钨CMP具有改进的对准标记完整性,减少的边缘残留物和减少的固定环缺口
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摘要
Tungsten CMP is conducted with improved alignment mark integrity and reduced edge residue by employing a retaining ring having a mechanical hardness greater than about 85 durometer and a relatively soft polishing pad. Embodiments of the present invention include conducting CMP employing a carrier comprising a retaining ring additionally having a wear rate during CMP of less than about 1 mil per hour and a polishing pad having a hardness less than about 60 durometer. Suitable retaining ring materials include ceramics, quartz, polymers and fiber reinforced polymers.
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