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Ultra low power voltage translation circuitry and its application in a TTL-to-CMOS buffer

机译:超低功耗电压转换电路及其在TTL至CMOS缓冲器中的应用

摘要

The power consumed by a voltage translator circuit, such as a TTL-to-CMOS buffer, is substantially reduced by changing the supply voltages provided to the input inverter. By reducing the supply voltage provided to the source of the p-channel transistor of the input inverter, the lowest logic-high TTL voltage applied to the gate turns off the p-channel transistor and turns on the n-channel transistor of the input inverter. By increasing the supply voltage provided to the source of the n-channel transistor of the input inverter, the highest logic-low TTL voltage applied to the gate turns off the n-channel transistor and turns on the p-channel transistor.
机译:通过改变提供给输入反相器的电源电压,可以大大降低电压转换电路(例如TTL到CMOS缓冲器)所消耗的功率。通过降低提供给输入反相器的p沟道晶体管的源极的电源电压,施加到栅极的最低逻辑高TTL电压将关断p沟道晶体管并导通输入反相器的n沟道晶体管。通过增加提供给输入反相器的n沟道晶体管的源极的电源电压,施加到栅极的最高逻辑低TTL电压将n沟道晶体管关断,并将p沟道晶体管导通。

著录项

  • 公开/公告号US6359470B1

    专利类型

  • 公开/公告日2002-03-19

    原文格式PDF

  • 申请/专利权人 ALLIANCE SEMICONDUCTOR;

    申请/专利号US20000735877

  • 发明设计人 CHAITANYA PALUSA;

    申请日2000-12-13

  • 分类号H03K170/18;

  • 国家 US

  • 入库时间 2022-08-22 00:48:54

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