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Static semiconductor memory cell formed in an n-well and p-well
Static semiconductor memory cell formed in an n-well and p-well
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机译:在n阱和p阱中形成的静态半导体存储单元
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摘要
A memory cell includes an n well and a p well. A word line is provided over memory cell and n well and p well are arranged in a direction in which word line extends. A single word line is provided for each memory cell and formed of metal.
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