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Semiconductor processing method of forming a static random access memory cell and static random access memory cell
Semiconductor processing method of forming a static random access memory cell and static random access memory cell
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机译:形成静态随机存取存储单元的半导体处理方法和静态随机存取存储单元
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摘要
A semiconductor processing method of forming a static random access memory cell having an n-channel access transistor includes, providing a bulk semiconductor substrate; patterning the substrate for definition of field oxide regions and active area regions for the n- channel access transistor; subjecting the patterned substrate to oxidizing conditions to form a pair of field oxide regions and an intervening n-channel access transistor active area therebetween, the field oxide regions having respective bird's beak regions extending into the n-channel access transistor active area, the n-channel access transistor active area defining a central region away from the bird's beak regions; and conducting a p-type V.sub.T ion implant into the n- channel active area using the field oxide bird's beak regions as an implant mask to concentrate the V.sub.T implant in the central region of the active area. A semiconductor device includes, a substrate; an n-type transistor on the substrate; and field oxide surrounding the transistor, the transistor having an active area including a central region and a peripheral region with respect to the field oxide, the transistor having a p-type V.sub.T ion implant which is more concentrated in the central region than in the peripheral region.
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