Headless CMP process for oxide planarization

摘要

A method for planarizing an oxide surface and removing dishing or erosion defect from a semiconductor wafer. An apparatus for carrying out the planarization process on a semiconductor wafer is further described. In the method, a wafer that has metal residues or dishing or erosion defect after a copper CMP process is first rotated at a rotational speed of at least 1000 RPM, while simultaneously a solvent/abrasive particles mixture is injected onto the rotating surface for a sufficient length of time until the metal residues, the dishing or erosion defect is removed. The rotational speed of the semiconductor wafer can be suitably controlled in a range between about 1000 RPM and about 10,000 RPM. For the removal of an oxide layer, a suitable solvent of diluted HF and a suitable abrasive particle such as aluminum oxide may be used.