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Non-volatile memory with functional capability of burst mode read and page mode read during suspension of an operation of electrical alteration
Non-volatile memory with functional capability of burst mode read and page mode read during suspension of an operation of electrical alteration
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机译:具有中止电气更改操作期间突发模式读取和页面模式读取的功能的非易失性存储器
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摘要
An electrically alterable semiconductor memory includes at least two memory sectors the content of which is individually alterable, and a control circuit for controlling operations of electrical alteration of the content of the memory, permitting the selective execution of an operation of electrical alteration of the content of one of the memory sectors with the possibility of suspending the execution to permit read access to the other of the memory sectors. The control circuit is also capable of permitting, during the suspension, an operation of burst mode or page mode reading of the content of the other memory sector.
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