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Non-volatile memory with functional capability of simultaneous modification of the content and burst mode read or page mode read
Non-volatile memory with functional capability of simultaneous modification of the content and burst mode read or page mode read
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机译:具有同时修改内容和突发模式读取或页面模式读取的功能的非易失性存储器
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摘要
An electrically alterable semiconductor memory comprises at least two substantially independent memory banks, and a first control circuit for controlling operations of electrical alteration of the content of the memory. The first control circuit permits the selective execution of an operation of electrical alteration of the content of one of the at least two memory banks. The memory also comprises second control circuit that permits, simultaneously with said operation of electrical alteration of the content of one of the at least two memory banks, a burst mode, page mode, or standard read operation for reading the content of the other memory bank.
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