首页>
外国专利>
Non-volatile memory with functional capability of burst mode read and page mode read during suspension of an operation of electrical alteration.
Non-volatile memory with functional capability of burst mode read and page mode read during suspension of an operation of electrical alteration.
展开▼
机译:具有在暂停电气变更操作期间读取突发模式和读取页面模式的功能的非易失性存储器。
展开▼
页面导航
摘要
著录项
相似文献
摘要
An electrically alterable semiconductor memory comprises at least two memory sectors (S1-S9) the content of which is individually alterable, and first control circuit means (4, 6) for controlling operations of electrical alteration of the content of the memory, capable of permitting the selective execution of an operation of electrical alteration of the content of one of said at least two memory sectors with the possibility of suspending said execution in order to permit read access to the other of said at least two memory sectors. The memory comprises second control circuit means (8, 6) capable of permitting, during said suspension, an operation of burst mode or page mode reading of the content of the other memory sector.
展开▼