A 125 MHz burst-mode flexible read-while-write 256 Mbit 2b/c 1.8V NOR flash memory

摘要

A 1.8 V 256 Mb 2b/cell NOR flash memory is designed in a 130 nm technology. A fast gate-voltage-ramp constant-current-reading concept is implemented to obtain a robust read-while-write/erase function and 125 MHz burst read frequency.