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Controlled cleavage thin film separation process using a reusable substrate

机译:使用可重复使用的基材的可控裂解薄膜分离工艺

摘要

A technique for forming films of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define donor substrate material (12) above the selected depth. Energy is provided to a selected region of the substrate to cleave a thin film of material from the donor substrate. Particles are introduced again into the donor substrate underneath a fresh surface of the donor substrate. A second thin film of material is then cleaved from the donor substrate.
机译:从供体基板( 10 )形成材料( 12 )膜的技术。该技术具有将高能粒子( 22 )穿过施主衬底( 10 )的表面引入选定深度( 20 )的步骤。在表面下方,其中粒子具有相对较高的浓度,以在选定深度上方定义施主衬底材料( 12 )。将能量提供给衬底的选定区域,以从供体衬底上劈开材料的薄膜。将颗粒再次在供体基材的新鲜表面下方引入供体基材中。然后从供体衬底上切下第二材料薄膜。

著录项

  • 公开/公告号US6335264B1

    专利类型

  • 公开/公告日2002-01-01

    原文格式PDF

  • 申请/专利权人 SILICON GENESIS CORPORATION;

    申请/专利号US20000663043

  • 发明设计人 FRANCOIS J. HENLEY;NATHAN W. CHEUNG;

    申请日2000-09-15

  • 分类号H01L212/65;H01L213/02;

  • 国家 US

  • 入库时间 2022-08-22 00:47:13

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