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Method and apparatus of correcting design-patterned data, method of electron beam and optical exposure, method of fabricating semiconductor and photomask devices
Method and apparatus of correcting design-patterned data, method of electron beam and optical exposure, method of fabricating semiconductor and photomask devices
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机译:校正设计图案数据的方法和装置,电子束和光学曝光的方法,半导体和光掩模器件的制造方法
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摘要
A method for correcting designed-pattern data obtained by data-processing a plurality of designed patterns, comprising the steps of (a) producing hierarchical-area-bitmapped bitmap data from a plurality of the designed-pattern data, (b) determining a line width of the designed pattern and a space width between said designed pattern and a designed pattern adjacent to said designed pattern, from said hierarchical-area-bitmapped bitmap data, and (c) correcting the designed-pattern data on the basis of the determined line width and the determined space width, for proximity effect correction and/or optical proximity effect correction.
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