METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR CHIP BASED ON III-V NITRIDE SEMICONDUCTOR MATERIAL, AND A CORRESPONDING RADIATION-EMITTING SEMICONDUCTOR CHIP

摘要

The invention relates to a method for producing a radiation-emitting semiconductor chip comprising a thin-layer element (11) based on III-V nitride semiconductor material. According to the inventive method, a series of layers of the thin-layer element (11) is deposited onto an epitaxial substrate (100), the thin-layer element is joined to a support (5), and the epitaxial substrate (100) is removed from the thin-layer element. The epitaxial substrate (100) comprises a substrate body (1), which is made of PolySiC or PolyGaN or of SiC, GaN or sapphire and which is joined to an epitaxial growth layer (2) by means of an adhesive layer (3), and the series of layers of the thin-layer element is epitaxially deposited on said epitaxial growth layer. The invention also relates to a radiation-emitting semiconductor chip that is produced in the aforementioned manner.