首页>
外国专利>
METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR CHIP BASED ON III-V NITRIDE SEMICONDUCTOR MATERIAL, AND A CORRESPONDING RADIATION-EMITTING SEMICONDUCTOR CHIP
METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR CHIP BASED ON III-V NITRIDE SEMICONDUCTOR MATERIAL, AND A CORRESPONDING RADIATION-EMITTING SEMICONDUCTOR CHIP
展开▼
机译:基于III-V族氮化物材料的辐射辐射半导体芯片的制造方法及对应的辐射辐射半导体芯片
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III-V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.
展开▼