-- A SELF-ALIGNED SILICIDE PROCESS FOR LOW RESISTIVITY CONTACTS TO THIN FILM SILICON-ON-INSULATOR MOSFETS

摘要

The present invention relates to a method of manufacturing a semiconductor device comprising depositing a metal or an alloy on a gate and source / drain structure formed in a silicon-on-insulator film (SOI film), reacting the metal or alloy with a silicon-Depositing a Si film on the first alloy; and depositing a Si film on the first alloy by reacting the Si film at a second temperature to form a second alloy, Forming an alloy, and selectively etching the unreacted layer of the Si film. RTI ID = 0.0 [0002] /RTI