PURPOSE: A method for manufacturing a Bi2Te3-based thermoelectric conversion material using a gas atomization process and a hot molding process is provided to guarantee a fine structure of a uniform single solid solution which has a uniform composition and doesn't almost have segregation, by using a gas atomization process to manufacture n-type and p-type Bi2Te3-based alloy powder which has a fine structure and is chemically uniform. CONSTITUTION: Sb2Te3 and Bi2Se3-added Bi2Te3-based alloy as an n-type composition and Bi2Te3-added Sb2Te3-based alloy as a p-type composition are used as a basic material, and are melted in a furnace which maintains a vacuum state of a predetermined pressure or an atmosphere of argon or nitrogen. The melted alloy is used to manufacture thermoelectric semiconductor powder which has a uniform structure and a fine spherical shape. The thermoelectric semiconductor powder is reduced. The reduced powder is cooling-molded and degassed. The cooling-molded material is hot-molded.
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