A method for fabricating HRL type SRAM

摘要

PURPOSE: A method for fabricating a high-load-resistor(HRL) static random access memory(SRAM) is provided to guarantee an operating characteristic of the SRAM, by using a capping layer capable of preventing hydrogen diffusion so that resistance of polysilicon HRL is stably guaranteed. CONSTITUTION: An interlayer dielectric(22) formed on a substrate is etched to form a node contact hole. A polysilicon layer(24) is formed along the surface of the resultant structure having the node contact hole. Conductive impurity ions are selectively implanted into the polysilicon layer to define an HRL region(24a). The polysilicon layer is patterned. A hydrogen diffusion blocking layer is formed along the surface of the resultant structure.