首页>
外国专利>
- - Apparatus and Fabrication Method of SiGe MODFET with a Metal-Oxide Gate
- - Apparatus and Fabrication Method of SiGe MODFET with a Metal-Oxide Gate
展开▼
机译:--具有金属氧化物栅极的SiGe MODFET的设备和制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A germanium silicon modulation doped field effect transistor(MODFET) using a metal-oxide layer gate is provided to improve a linear characteristic of a hetero-junction complementary metal oxide semiconductor(CMOS), by using a hetero junction structure of SiGe/C and SiGe/Si. CONSTITUTION: A buffering thin film made of silicon is grown on a silicon substrate. A SiGe channel layer and a silicon cap layer are formed on the buffering thin film. A low temperature buffer layer and a SiGe buffer layer are grown on the silicon substrate by a low temperature process. A defect caused by lattice mismatch applied from the silicon substrate to an epi layer is artificially formed.
展开▼