SiGe MODFET with a metal-oxide film and method for fabricating the same

摘要

There is disclosed a method for fabricating a SiGe MODFET device using a metal oxide film. The present invention provides a SiGe MODFET device with improved operation speed and reduced non-linear operation characteristic caused in a single channel structure devices, by increasing the mobility of the carriers in the SiGe MODEFT having a metal-oxide gate, and method of fabricating the same. In order to accomplish the above object, the present invention grows a silicon buffer layer and a SiGe buffer layer on a silicon substrate by low-temperature process, so that defects caused by the mismatch of the lattice constants being applied to the epitaxial layer from the silicon substrate are constrained in the buffer layered formed by the low-temperature process.