.A proved extraction method for model parameter of SPICE

摘要

PURPOSE: An improved method for extracting a SPICE(Simulation Program with Integrated Circuit Emphasis) model parameter is provided to fit the simulation result of the worst-case distribution of a semiconductor to the fabrication result exactly. CONSTITUTION: The method comprises the steps of measuring the typical case data and the worst-case data for the various electric characteristics of the fabricated devices(201), extracting a preliminary model parameter by using the typical data(202), and fixing a set of the typical SPICE model parameter if the extracted preliminary model parameter reaches to the target value(204). The preliminary mode parameter for the statistics is extracted by using the typical case data and the worst-case data(205). If the preliminary model parameter for the statistics satisfies the target value, a set of the model parameter for the statistics is fixed(207). The worst-case SPICE model parameter set is decided by considering the value of the typical SPICE model parameter and the statistical model parameter for the statistics(208).