In this paper, an accurate IGBT model is presented. This model is based on the IGBT physic structure. It uses an equivalent circuit which combines an MOSFET in series with a diode. All its parameters can be extracted easily from the experimental results. The proposed model presents a good agreement with the measurements. It gives an average error less than 12% for the output characteristics and less than 7% for the transfer characteristic. Moreover, the model is simple and can be implemented in any SPICE-based circuit simulator. A description of the model and the parameter extraction procedure will be provided along.
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